OpticNano Consulting

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OPTICNANO Consulting

126,route de St Donat

  38250 Lans en Vercors-France

Phone +33(0)970 44 82 71

mobile: +33(0)688701450

e-mail: info@opticnano.eu

Skype: opticnano

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Toward the Design of a new all  integrated,  imaging Spectroscopic Polarimetric Ellipso Microscope,(SPEM).


General state of art has been well developed these last decades in the SE Ellipso Polarimetry field. More than thirty years transformed this old technique into powerful tool but still R&D fashion even as big embodied and only mostly dedicated tools. Ellipsometry apparatus systems are indeed present in clean room environment and many industrial fields New SE Ellipso polarimeter designs are proposed today with complete full Muller matrix capability. The project should plan to build a compact and an integrated low cost system that can be realized using new integrated technology and implemented inside a regular optical microscope.Integrated structures with no movables parts assemblies enhance stability and repeatability of any optical instrument. For SPEM, that should lead to a large dedicated application dissemination. With present remote computing capabilities, polarimetric Spectroscopic Ellipsometer (SE) , it is possible to process real time optical data using the new technologies concepts available today. Full integrated polarimeter designs are already partly discussed in the literature. In such a project, more global solutions have to be considered i. e., a microscope polarimeter design including both spectroscopic capability (sp-polarimetry), angle resolved polarimetry (ar-polarimetry), and reduced spot size analysis capability for imaging, (i-polarimetry).It is worth them to reconsider all the assembly of such systems and how it has to be implemented in an integrated metrology concept: As light sources, various options can be adopted, laser, LED, or lamp source Kohler illumination systems


Spectroscopic Ellipsometry (SE) can be used for structure change observations in thin, (less than 10nm) HfO2 layers deposited by p-MOCVD on silicon substrate. The absorption edge Eg and most of the critical point transitions in HfO2 are above 6 eV, which makes the extension to Deep UV SE (5 to 9 eV) very suitable. The layer thickness can be deduced from the visible transparency range (where k~0). As a contrary, in the UV, the weak penetration of light enables to use a direct inversion method for n and k. It is shown that when the HfO2 thickness decreases below 3 nm, the analytical Tauc-Lorentz (TL) or Cody Lorentz models are no more applicable. The phase mixture changes as function of thickness and deposition process temperature, deduced from SE correspond well to XRD and Angle Resolved (AR)-XPS spectroscopy observations. From the absorption spectra at 4.5 eV,  defects such as oxygen vacancies can be observed, whereas O/Hf ratio is estimated from XPS spectra. Deep UV SE reveals differences in the dielectric function with orthorhombic/monoclinic phase mixtures essentially with peaks at 7.5 and 8.5 eV. Quantum confinement originated from the grain size of the films and the excitonic origin of the 6 eV feature is discussed. see article here..







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For a list of worshop in ellipsometry and events from the ellipsometry community  see here  But you will be asked to register also to NanoCharm.nanocharm



GGratingScatterometry models for IC design CD data

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Here will be  Future developpments...

EuV Projects


Thick SiO2 on silicon substrate sample  Ellipsometry data ( Experiments : SE UV Ellipsometer at LETI . (unpublished 2008)


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